DYNAMIC RANDOM ACESS MEMORY CELL TRANSISTOR AND FORMING METHOD THEREOF,申请号KR20040053206-传众专利搜索

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发明名称	DYNAMIC RANDOM ACESS MEMORY CELL TRANSISTOR AND FORMING METHOD THEREOF
摘要
申请公布号	KR20060004191(A)	申请公布日期	2006.01.12
申请号	KR20040053206	申请日期	2004.07.08
申请人	HYNIX SEMICONDUCTOR INC.	发明人	CHOI, KANG SIK
分类号	H01L29/78;H01L21/336	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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