发明名称
摘要 <p>A technique for and structures for camouflaging an integrated circuit structure. The integrated circuit structure is formed by a plurality of layers of material having a controlled outline. A layer of conductive material having a controlled outline is disposed among said plurality of layers to provide artifact edges of the conductive material that resemble one type of transistor (operable vs. non-operable), when in fact another type of transistor was used.</p>
申请公布号 JP2006501692(A) 申请公布日期 2006.01.12
申请号 JP20050501980 申请日期 2003.09.23
申请人 发明人
分类号 H01L21/822;G06K19/073;H01L23/58;H01L27/04 主分类号 H01L21/822
代理机构 代理人
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