| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film forming apparatus which eliminates influences of Cl without carrying out a post treatment process and which prevents formation of an impurity layer or the like. SOLUTION: After a Cu thin film is formed, supply of Cl<SB>2</SB>gas 21 is stopped as well as Ar gas 22 is supplied through a gas nozzle 18 to generate Ar<SP>*</SP>so as to substitute Ar<SP>*</SP>for Cl<SP>*</SP>remaining after the film of a Cu component is formed on a substrate 3. Thereby, formation of a contaminated layer of particles due to re-reaction of residual Cl<SP>*</SP>is suppressed, the surface of the Cu layer is kept clean and the surface of a member 11 to be etched is kept clean. COPYRIGHT: (C)2006,JPO&NCIPI
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