| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for removing metal deposits where a titanium-containing compound, a tantalum-containing compound, a chromium-containing compound, a niobium-containing compound, a silicon oxide-containing compound, a strontium-containing compound, a tin-containing compound and a zirconium-containing compound deposited on a semiconductor fabrication equipment fixture or a product base material made of an aluminum alloy, stainless steel, a nickel alloy, silicon, a copper alloy, a molybdenum alloy and steel are removed in a short time, corrosiveness to the base material is reduced, and a large quantity of objects to be washed can be washed at a time. SOLUTION: In the method for removing metal deposits, the removal of metal deposits as the objects to be washed is performed with hydrofluoric acid with a hydrogen fluoride concentration of 52 to 70 wt% at a liquid temperature of 0 to 40°C in a chemical tank provided with a cooling mechanism and a hydrogen fluoride concentration meter. COPYRIGHT: (C)2006,JPO&NCIPI
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