| 摘要 |
A method for manufacturing a semiconductor device is disclosed which enables to suppress decrease in the mobility in a channel region by suppressing piercing of boron through a gate insulating film which boron is ion-implanted into a gate electrode. The method for manufacturing a semiconductor device comprises a step for forming a gate insulating layer on an active region of a semiconductor substrate, a step for introducing nitrogen through the front surface of the gate insulating layer using active nitrogen, and a step for conducting an annealing treatment in an NO gas atmosphere so that the nitrogen concentration distribution in the nitrogen-introduced gate insulating layer is high on the front surface side and low on the side of the interface with the semiconductor substrate.
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