| 发明名称 |
Etching method, etching apparatus, and method for manufacturing semiconductor device |
| 摘要 |
In order to reliably remove, by wet etching, a compound containing a metal and silicon, e.g., a silicate ( 101 a) containing hafnium metal, the silicate ( 101 a) is oxidized and then the oxidized silicate ( 101 a) is wet-etched.
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| 申请公布号 |
US2006009039(A1) |
申请公布日期 |
2006.01.12 |
| 申请号 |
US20050203110 |
申请日期 |
2005.08.15 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
FUJII SHINJI |
| 分类号 |
C23F1/00;C23F1/30;H01L21/302;H01L21/304;H01L21/306;H01L21/311 |
主分类号 |
C23F1/00 |
| 代理机构 |
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| 主权项 |
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