| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation method that dispenses with a large-scale apparatus and a number of processes, such as a photolithography process, and can quickly, easily, and precisely measure the electrical characteristics of an SOI wafer, and improves the working efficiency of a measuring apparatus for evaluating the SOI wafer efficiently. SOLUTION: In the method for evaluating the SOI wafer using a mercury probe, at least a natural oxide film formed on the surface of the SOI wafer is removed by performing fluoric acid cleaning treatment to the SOI wafer, an oxide film is formed on the surface of the SOI layer of the SOI wafer in which the natural oxide film is removed, and the mercury probe is brought into contact with the SOI wafer in which the oxide film is formed for evaluating the SOI wafer. COPYRIGHT: (C)2006,JPO&NCIPI
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