发明名称 Nonvolatile semiconductor memory
摘要 A block comprises physical addresses 0, 1, 2, 3. In an initial state, all the physical addresses 0, 1, 2, 3, are in an erase state. When data LA 0 , LA 1 , LA 2 , LA 3 are written in the physical addresses 0, 1, 2, 3, count values are "1", respectively. In this manner, a write/erase operation is performed by a page (physical address) unit, and the count value of the physical address in which the data has been renewed is renewed. Finally, when a total of the count values in the block reaches an allowable value 32, refresh is performed, and states of memory cells in the block are initialized.
申请公布号 US2006007751(A1) 申请公布日期 2006.01.12
申请号 US20050227516 申请日期 2005.09.16
申请人 TANAKA YOSHIYUKI 发明人 TANAKA YOSHIYUKI
分类号 G06F12/16;G11C11/34;G06F12/00;G06F12/02;G06K19/07;G11C16/00;G11C16/02;G11C16/04;G11C16/34 主分类号 G06F12/16
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