THERMISTOR THIN-FILM AND METHOD OF FORMING THE SAME

摘要

A method of forming a thermistor thin-film capable of suppression of self-heating and being free from mechanical defects, such as deformation and crack; and a relevant thermistor thin-film. There is provided a thermistor film that excels in mechanical strength and film uniformity, being capable of formation of high-precision patterns, and that acquires electrical properties required for infrared detection sensors, thereby being most suitable for use in an infrared detection sensor making use of a film of transition metal oxide. Such a thermistor thin-film is one comprised of crystals whose 90% or more are occupied by crystal grains of 0.05 to 0.2 µm thickness and > 0.5 but < 2.0 aspect ratio and composed of an Mn<SUB>3</SUB>O<SUB>4</SUB>-Co<SUB>3</SUB>O<SUB>4</SUB> or Mn<SUB>3</SUB>O<SUB>4</SUB>-Co<SUB>3</SUB>O<SUB>4</SUB>-Fe<SUB>2</SUB>O<SUB>3</SUB> composite metal oxide. Such a thermistor thin-film can be formed by a process comprising providing by sputtering a 0.05 to 0.2 µm thick film of Mn<SUB>3</SUB>O<SUB>4</SUB>-Co<SUB>3</SUB>O<SUB>4</SUB> or Mn<SUB>3</SUB>O<SUB>4</SUB>-Co<SUB>3</SUB>O<SUB>4</SUB>-Fe<SUB>2</SUB>O<SUB>3</SUB> composite metal oxide on a foundation layer of SiO<SUB>2</SUB> and subjecting the resultant film to heat treatment at 550° to 650°C in an environment of atmospheric air or atmosphere of nitrogen and oxygen mixed together.