发明名称 |
Materials with enhanced properties for shallow trench isolation/premetal dielectric applications |
摘要 |
The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits capable of withstanding wet etch treatments. A silica dielectric film is formed on a substrate. The silica dielectric film has a density of from about 1.0 to about 2.3 g/ml, a SiC:SiO bond ratio of about 0.015 or more, a dielectric constant of about 4.0 or less, a breakdown voltage of about 2 MV/cm or more, and a wet etch resistance in a 100:1 by volume mixture of water and hydrogen fluoride of about 30 Å/minute or less.
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申请公布号 |
US2006008659(A1) |
申请公布日期 |
2006.01.12 |
申请号 |
US20040886247 |
申请日期 |
2004.07.07 |
申请人 |
LU VICTOR;JIN LEI;SUEDMEYER ARLENE J;ENDISCH DENIS H;APEN PAUL G;DANIELS BRIAN J;ZHOU DELING;NAMAN ANANTH |
发明人 |
LU VICTOR;JIN LEI;SUEDMEYER ARLENE J.;ENDISCH DENIS H.;APEN PAUL G.;DANIELS BRIAN J.;ZHOU DELING;NAMAN ANANTH |
分类号 |
B32B13/04 |
主分类号 |
B32B13/04 |
代理机构 |
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