发明名称 |
Method for etching smooth sidewalls in III-V based compounds for electro-optical devices |
摘要 |
<p>III-V based compounds are etched to produce smooth sidewalls for electro-optical applications using BCl3 together with chemistries of CH4 and H2 in RIE and/or ICP systems. HI or IBr or some combination of group VII gaseous species (Br, F, I) may be added in accordance with the invention.
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申请公布号 |
EP1528592(A3) |
申请公布日期 |
2006.01.11 |
申请号 |
EP20040013445 |
申请日期 |
2004.06.08 |
申请人 |
AGILENT TECHNOLOGIES, INC. |
发明人 |
MIRKARIMI, LAURA WILLS;CHOW, KAI CHEUNG |
分类号 |
H01L21/306;H01L21/00;G03F7/20;H01L21/302;H01L21/3065;H01L21/3213;H01L21/461 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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