发明名称 Method for etching smooth sidewalls in III-V based compounds for electro-optical devices
摘要 <p>III-V based compounds are etched to produce smooth sidewalls for electro-optical applications using BCl3 together with chemistries of CH4 and H2 in RIE and/or ICP systems. HI or IBr or some combination of group VII gaseous species (Br, F, I) may be added in accordance with the invention. </p>
申请公布号 EP1528592(A3) 申请公布日期 2006.01.11
申请号 EP20040013445 申请日期 2004.06.08
申请人 AGILENT TECHNOLOGIES, INC. 发明人 MIRKARIMI, LAURA WILLS;CHOW, KAI CHEUNG
分类号 H01L21/306;H01L21/00;G03F7/20;H01L21/302;H01L21/3065;H01L21/3213;H01L21/461 主分类号 H01L21/306
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