| 摘要 |
A main etching step is effected in a state under a first pressure using a gas containing at least HBr, e.g., a mixture gas of HBr and Cl2 as an etching gas. The main etching is ended before a silicon oxide film layer (102). An over-etching step is effected under a second pressure higher than the first pressure using a gas containing at least HBr, e.g., an HBr single gas so as to completely expose the silicon oxide film layer (102). In such a way, the selectivity of a silicon-containing conductive film layer with respect to the silicon oxide film is improved compared to conventional methods. Without etching the silicon oxide film layer, which is an underlying layer, and without marring the shape of the silicon-containing conductive film layer formed by etching, only the desired silicon-containing conductive film layer is removed by etching reliably.
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