发明名称 |
SRAM with forward body biasing to improve read cell stability |
摘要 |
A SRAM memory cell comprising cross-coupled inverters, each cross-coupled inverter comprising a pull-up transistor, where the pull-up transistors are forward body biased during read operations. Forward body biasing improves the read stability of the memory cell. Other embodiments are described and claimed.
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申请公布号 |
US6985380(B2) |
申请公布日期 |
2006.01.10 |
申请号 |
US20040810093 |
申请日期 |
2004.03.26 |
申请人 |
INTEL CORPORATION |
发明人 |
KHELLAH MUHAMMAD M.;SOMASEKHAR DINESH;YE YIBIN;FARHANG ALI R.;PANDYA GUNJAN H.;DE VIVEK K. |
分类号 |
G11C11/412;G11C11/41;G11C11/419 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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