发明名称 |
Method of making a nonvolatile memory programmable by a heat induced chemical reaction |
摘要 |
A nonvolatile memory cell occupying a minimum chip area is provided with a cell structure that includes two or more base materials being programmable by a heat induced chemical reaction to form a layer or layers of alloy. The formation of alloy results in a change in resistance of the cell structure so that one or more programmed states are determined. A semiconductor memory constructed by a large number of the nonvolatile memory cells can be obtained in a compact manner with simple and as few as possible steps. This process vertically stacked layers, and this semiconductor memory is thus easily to be combined with other integrated circuits on a single chip.
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申请公布号 |
US6984548(B2) |
申请公布日期 |
2006.01.10 |
申请号 |
US20050033895 |
申请日期 |
2005.01.13 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUNG HSIANG-LAN;LIU RUI-CHEN |
分类号 |
H01L21/82;G11C13/02;G11C17/14 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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