发明名称 Method for determining etching process conditions and controlling etching process
摘要 Conventionally, there is no method for quantitatively evaluating the three-dimensional shape of an etched pattern in a non-destructive manner and it takes much time and costs to determine etching conditions. With the conventional length measuring method only, it has been impossible to detect an abnormality in the three-dimensional shape and also difficult to control the etching process. According to the present invention, variations in signal amounts of an SEM image are utilized to compute three-dimensional shape data on the pattern associated with the etching process steps, whereby the three-dimensional shape is quantitatively evaluated. Besides, determination of etching process conditions and process control are performed based on the three-dimensional shape data obtained. The present invention makes it is possible to quantitatively evaluate the three-dimensional shape of the etched pattern in a non-destructive manner. Further, the efficiency of determining the etching process conditions and a stable etching process can be realized.
申请公布号 US6984589(B2) 申请公布日期 2006.01.10
申请号 US20030460217 申请日期 2003.06.13
申请人 发明人
分类号 H01L21/306;H01L21/66;G01N23/225;G01Q20/00;G01Q30/06;H01L21/3065;H01L21/3213 主分类号 H01L21/306
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