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发明名称
A METHOD FOR FORMING A GATE LINE IN FLASH MEMORY DEVICE
摘要
申请公布号
KR20060000793(A)
申请公布日期
2006.01.06
申请号
KR20040049761
申请日期
2004.06.29
申请人
HYNIX SEMICONDUCTOR INC.
发明人
JANG, MIN SIK
分类号
H01L21/8247
主分类号
H01L21/8247
代理机构
代理人
主权项
地址
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