摘要 |
A method of fabricating a semiconductor device structure, includes: providing a substrate, providing an electrode on the substrate, forming a recess in the electrode, the recess having an opening, disposing a small grain semiconductor material within the recess, covering the opening to contain the small grain semiconductor material, within the recess, and then annealing the resultant structure. |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;DORIC, BRUCE, B.;BELYANSKY, MICHAEL, P.;BOYD, DIANE, C.;CHIDAMBARRAO, DURESETI;GLUSCHENKOV, OLEG |
发明人 |
DORIS, BRUCE, B.;BELYANSKY, MICHAEL, P.;BOYD, DIANE, C.;CHIDAMBARRAO, DUSRETI;GLUSCHENKOV, OLEG |