发明名称 |
Use of voids between elements in semiconductor structures for isolation |
摘要 |
A flash EEPROM or other type of memory cell array having adjacent charge storage elements is formed with a gas filled void between them in order to reduce the level of capacitive coupling between storage elements, thus reducing cross-coupling between charge storage elements and resulting errors occurring in the data read from the array.
|
申请公布号 |
US2006001073(A1) |
申请公布日期 |
2006.01.05 |
申请号 |
US20050210218 |
申请日期 |
2005.08.22 |
申请人 |
CHEN JIAN;HIGASHITANI MASAAKI |
发明人 |
CHEN JIAN;HIGASHITANI MASAAKI |
分类号 |
H01L29/76;H01L21/768;H01L21/8247;H01L23/522;H01L27/115 |
主分类号 |
H01L29/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|