SEMICONDUCTOR DEVICE

摘要

There is provided a semiconductor device capable of suppressing current collapse, dielectric voltage, and lowering of gain, so as to enabling high-voltage operation and realizing an ideal high output. On a substrate (101), there are formed a buffer layer (102) made from a first GaN-based semiconductor, a carrier travel layer (103) made from a second GaN-based semiconductor, and a carrier supply layer (104) made from a third GaN-based semiconductor. A part of a first insulation film (107) and a part of the carrier supply layer (104) are removed to prepare a recess structure (108). Next, a gate insulation film (109) is formed and the recess part (108) is embedded. On the remaining region of the first insulation film (107), a gate electrode (110) is formed so that the drain electrode side is longer as compared to the source electrode side. By using the recess structure, it is possible to provide a high-output semiconductor device capable of performing high-voltage operation.