| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor utilizing a highly-oriented ferroelectric crystalline thin film that is grown reproducibly, and a semiconductor device therewith. SOLUTION: A capacitor consists of a lower electrode 13 having a (111) oriented crystalline structure, a ferroelectric material thin film 12 consisting of crystalline grains aligned to form a stacking layered structure, and an upper electrode 11, wherein more than 80% of the stacking orientation (c axis) of the single-crystalline cells of the crystalline grains lie in the direction 54.7 deg. (or 35.3 deg.) from the interface with the lower electrode 13. Such a ferroelectric material thin film 12 can be grown reproducibly with an epitaxial growth method. A semiconductor device, such as an FeRAM(ferroelectric random access memory), is obtained using the capacitor stated above. |
