| 摘要 |
The invention relates to a method for adapting structure dimensions during the photolithographic projection of a pattern of structure elements onto a semiconductor wafer. An exposure device ( 5 ) is provided, which can emit light in two polarization planes ( 32; 34 ). Through the choice of the degree of polarization, i.e., the ratio of the intensity in the first polarization plane ( 32 ) to the intensity in the second polarization plane ( 34 ), it is possible to alter the ratio of width ( 40 ) to length ( 42 ) of the resist structure ( 36 ) formed on the resist layer ( 14 ). A variation of approximately 30% with respect to dimensionally accurate imaging can thus be achieved in a simple manner.
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