发明名称 SEMICONDUCTOR CIRCUIT DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To reduce a variation in the current performance of a charge pump circuit. <P>SOLUTION: A boost-up capacity element C1 of a charge pump circuit 110 and a capacity element of an oscillator circuit 123 are formed so that the boost-up capacity element C1 of the charge pump circuit 110 and the capacity film (oxidization insulating film) of the capacity element of an oscillator circuit 123 may become the same substantially. Furthermore, it is preferable that the capacity element C1 and the capacity element C2 are simultaneously formed in the same process. By forming the capacity film of each capacity element in this way, it is made possible to greatly reduce a variation in capacity ratio resulting from a variation in the capacity film of the capacity element C1 and the capacity element C2, and moreover to reduce a variation in the current performance Icp of the pump circuit 110. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006005099(A) 申请公布日期 2006.01.05
申请号 JP20040178748 申请日期 2004.06.16
申请人 NEC ELECTRONICS CORP 发明人 HANIYU MASAMI
分类号 H01L27/04;G11C16/06;H01L21/822;H02M3/07 主分类号 H01L27/04
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