| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for liquid phase epitaxy by which a light emitting diode that is reduced in characteristic defect can be manufactured by preventing the dropping out of As from the rear surface of a GaAs substrate. SOLUTION: In the method for liquid phase epitaxy, an epitaxial layer composed of a compound semiconductor is grown by using an epitaxial growth device in which a substrate holder 12 housing the GaAs substrate 1 and a raw material solution holder 13 having two or more raw material solution sumps 15 in the sliding direction are faced to each other. In addition, they can be slid relatively to each other. At the time of growing the epitaxial layer on the GaAs substrate 1 by bringing the GaAs substrate 1 into contact with a raw material solution for growth while the solution is cooled from a prescribed temperature, the dropping out of As from the rear surface of the substrate 1 is prevented during the growth of the epitaxial layer by providing in advance an SiO<SB>2</SB>film 5 on the rear surface of the GaAs substrate 1. COPYRIGHT: (C)2006,JPO&NCIPI
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