| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of executing rewriting within a short time by preventing the loss of initial setting data. <P>SOLUTION: This nonvolatile semiconductor memory device is provided with a memory cell array where electrically rewritable nonvolatile memory cells are arrayed and the same initial setting data is stored in at least two areas, i.e., first and second areas, a sense amplifier circuit for reading data from the memory cell array, an initial setting data register for transferring and holding the initial setting data read from the memory cell array to the sense amplifier and regulating memory operation conditions, and a controller for executing sequential control to sequentially rewriting the initial setting data stored in the first and second areas of the memory cell array according to the input of one command. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
