发明名称 High speed memory modules utilizing on-pin capacitors
摘要 Apparatus and method for producing memory modules having a plurality of branches connected to a memory bus, each branch containing at least one dynamic random access memory (DRAM) device or SDRAM device connected to the memory bus via at least one transmission signal (TS) line and/or at least one sub-transmission signal (STS) line. The memory modules include at least one branch containing a capacitor connected in parallel to the TS line or STS line and the DRAM device or SDRAM device. A computing system implementing the memory modules is also discussed.
申请公布号 US2006001443(A1) 申请公布日期 2006.01.05
申请号 US20040882626 申请日期 2004.06.30
申请人 WANG BRIAN B;CHANG GE 发明人 WANG BRIAN B.;CHANG GE
分类号 H03K19/003 主分类号 H03K19/003
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