发明名称 PLASMA PROCESSING EQUIPMENT
摘要 <p>A plurality of concentric ring-shaped slots (300-304) are formed on a planar antenna member (3), conductors (310, 311) at a center part are formed relatively thin, and conductors (312-315) at the peripheral part are formed relatively thick. Thus, microwaves pass through more easily without being attenuated by the slots (300-304), uniform electric field distribution can be obtained, and high density plasma can be generated uniformly in average in a processing space. Therefore, an object to be processed can be brought close to the antenna member (3), and the object to be treated can be uniformly processed at a high speed.</p>
申请公布号 WO2006001253(A1) 申请公布日期 2006.01.05
申请号 WO2005JP11273 申请日期 2005.06.20
申请人 KYOTO UNIVERSITY;TOKYO ELECTRON LIMITED;ONO, KOUICHI;KOUSAKA, HIROYUKI;ISHIBASHI, KIYOTAKA;SAWADA, IKUO 发明人 ONO, KOUICHI;KOUSAKA, HIROYUKI;ISHIBASHI, KIYOTAKA;SAWADA, IKUO
分类号 (IPC1-7):H05H1/46;H01L21/306;C23C16/511;H01L21/31 主分类号 (IPC1-7):H05H1/46
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