发明名称 |
Method of passivating oxide/compound semiconductor interface |
摘要 |
The present invention provides a method of passivating an oxide compound disposed on a III-V semiconductor substrate. The method is intended for use with dielectric stacks, gallate compounds, and gallium compounds used in gate quality oxide layers. The method includes heating a semiconductor structure at an elevated temperature of between about 230° C. and about 400° C. The semiconductor structure is exposed to an atmosphere that is supersaturated with water vapor or vapor of deuterium oxide. The exposure takes place at elevated temperature and continues for a period of time between about 5 minutes to about 120 minutes. It has been found that the method of the present invention results in a semiconductor product that has significantly improved performance characteristics over semiconductors that are not passivated, or that use a dry hydrogen method of passivation.
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申请公布号 |
US2006003595(A1) |
申请公布日期 |
2006.01.05 |
申请号 |
US20040882482 |
申请日期 |
2004.06.30 |
申请人 |
PASSLACK MATTHIAS;MEDENDORP NICHOLAS W JR |
发明人 |
PASSLACK MATTHIAS;MEDENDORP NICHOLAS W.JR. |
分类号 |
H01L21/469;H01L21/31;H01L21/3205;H01L21/4763 |
主分类号 |
H01L21/469 |
代理机构 |
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主权项 |
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地址 |
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