发明名称 |
HYBRID MOLECULAR ELECTRONIC DEVICE FOR SWITCHING, MEMORY, AND SENSOR APPLICATIONS, AND METHOD OF FABRICATING SAME |
摘要 |
<p>A hybrid molecular electronic device having switching, memory, and sensor application is disclosed. In one embodiment, the device resembles a conventional field-effect transistor (FET) formed on a silicon-on-insulator (SOI) substrate. Source and drain doped regions are formed in an upper surface of the SOI substrate, and a metallization layer which can serve as a gate contact is formed on a lower surface of the SOI substrate. A channel region spanning between the doped source and drain regions is left exposed, in order that a monolayer of molecules may be formed therein. Upon application of appropriate gating voltages to the gate contact, conduction between the source and drain regions can be modulated, possibly as a result of the reduction and oxidation of the molecules grafted to the gate region.</p> |
申请公布号 |
WO2006002129(A2) |
申请公布日期 |
2006.01.05 |
申请号 |
WO2005US21861 |
申请日期 |
2005.06.21 |
申请人 |
TOUR, JAMES, M.;PANG, HARRY, F.;HE, JIANLI |
发明人 |
TOUR, JAMES, M.;PANG, HARRY, F.;HE, JIANLI |
分类号 |
H01L29/772;H01L51/05 |
主分类号 |
H01L29/772 |
代理机构 |
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