| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve performance of a memory cell by constituting an SRAM memory cell with an FD-SOI transistor and then controlling a potential of the lower layer of the embedded oxide film of the SOI transistor to form a drive transistor, and to improve performance of the SRAM circuit under the low power supply voltage condition. <P>SOLUTION: In the SRAM memory cell constituted by using an FD-SOI transistor, stable operation of the memory cell is realized by increasing a well potential under the BOX layer of the drive transistor in order to control the Vth. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
