发明名称 METHOD FOR CUSTOMIZING A POLISH PADS FOR CHEMICAL MECHANICAL PLANARIZATION (CMP)
摘要 <p>A polishing pad for chemical mechanical planarization of a film on a substrate is customized by obtaining one or more characteristics of a structure on a substrate. For example, when the structure is a chip formed on a semiconductor wafer, the one or more characteristics of the structure can include chip size, pattern density, chip architecture, film material, film topography, and the like. Based on the one or more characteristics of the structure, a value for the one or more chemical or physical properties of the pad is selected. For example, the one or more chemical or physical properties of the pad can include pad material hardness, thickness, surface grooving, pore size, porosity, Youngs modulus, compressibility, asperity, and the like.</p>
申请公布号 EP1610929(A1) 申请公布日期 2006.01.04
申请号 EP20040758522 申请日期 2004.03.25
申请人 NEOPAD TECHNOLOGIES CORPORATION 发明人 ROY, PRADIP K.;MISRA, SUDHANSHU
分类号 B24B37/04;B24B37/20;B24B49/02;B24B53/007;B24B53/017;(IPC1-7):B24B37/04 主分类号 B24B37/04
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