发明名称 |
MRAM array having a segmented bit line |
摘要 |
A magneto-resistive random access memory (MRAM) array comprises global bit lines segmented using a plurality of local bit lines. A read/write controller is connected to the switches. Switches couple the global bit line to the local bit lines. The MRAM array has low leakage currents and facilitates a high signal-to-noise (S/N) ratio of read and write operations.
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申请公布号 |
US6982902(B2) |
申请公布日期 |
2006.01.03 |
申请号 |
US20030679160 |
申请日期 |
2003.10.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP. |
发明人 |
GOGL DIETMAR;DEBROSSE JOHN K. |
分类号 |
G11C11/00;G11C11/15 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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