发明名称 |
Semiconductor memory device |
摘要 |
The semiconductor memory device comprises a plurality of word lines including one or more redundant word lines; a plurality of pairs of bit lines; a plurality of memory cells connected to the above-mentioned plurality of word lines and the above-mentioned plurality of pairs of bit lines; a plurality of word-line drivers, each of which is connected to respective one ends of the above-mentioned plurality of word lines and controlled by a plurality of word-line control signals; and a plurality of first word-line control circuits respectively located at the other ends of the above-mentioned plurality of word lines, each of the above-mentioned plurality of first word-line control circuits receiving a signal level of a corresponding one of the above-mentioned plurality of word lines.
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申请公布号 |
US6982912(B2) |
申请公布日期 |
2006.01.03 |
申请号 |
US20040833922 |
申请日期 |
2004.04.28 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YAMAGAMI YOSHINOBU |
分类号 |
G11C11/413;G11C29/00;G11C7/00;G11C29/04 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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