| 摘要 |
<p>A semiconductor light emitting device wherein the aspect ratio of a laser beam is improved to be close to a circle, and a method for fabricating the same. On a substrate (10), a first conductivity type first clad layer (11), an active layer (12), and a second conductivity type second clad layer (17) partially having a ridge shape RD as a current constriction structure are formed in layers. The second clad layer at the ridge shape part has a structure including a first ridge shape layer (15) of high band gap on the side close to the active layer, and a second ridge shape layer (16) of low band gap on the side remote from the active layer. The semiconductor light emitting device is fabricated by forming a first clad layer, an active layer, and a second conductivity type second clad layer, in layers, on a substrate by epitaxial growth, and then cutting a part of the second clad layer into ridge shape. The second clad layer is formed such that a first ridge shape layer and a second ridge shape layer are included in a part to have a ridge shape.</p> |
