| 摘要 |
<p>A semiconductor exposure apparatus and a method for exposing a semiconductor using the same are disclosed, which can prevent differences in critical dimensions according to variations in slit intensity profile of exposure light passing through a slit. The apparatus comprises a module for adjusting a slit intensity profile of exposure light passing through the slit, and a sensor for checking an optimized slit intensity profile. It is possible to optimize the slit intensity profile of the exposure light according to various intensity establishments. Additionally, since a difference in intensity of light in an X direction of the slit is decreased, uniformity of a CD within a field is enhanced.</p> |
