发明名称 |
High-frequency switch for attenuator, has field effect transistor with gate terminal coupled to control terminal provided with positive control voltage which is higher than source terminal voltage and less than transistor pinch-off voltage |
摘要 |
<p>The switch has a field effect transistor (2) whose gate terminal is coupled to a control voltage at a control terminal by a series resistor (Rv). Positive and negative control voltages are present at the control terminal when the switch is in switched-on and switched-off condition, respectively. The positive voltage is higher than the voltage at a source terminal and is less than the pinch-off voltage of the transistor.</p> |
申请公布号 |
DE102004027361(A1) |
申请公布日期 |
2005.12.29 |
申请号 |
DE20041027361 |
申请日期 |
2004.06.04 |
申请人 |
ROHDE & SCHWARZ GMBH & CO. KG |
发明人 |
BERANEK, JAROSLAV |
分类号 |
H03K17/16;H03K17/687;(IPC1-7):H03K17/687 |
主分类号 |
H03K17/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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