发明名称 |
METHOD FOR THE SELECTIVE DEPOSITION OF A GALVANIC COATING ON A MINIATURISED ELECTRIC CIRCUIT CREATED BY ETCHING |
摘要 |
<p>The invention relates to a method comprising the following steps: a layer of a photosensitive product (2) is deposited on a full metallic strip (1); a first mask comprising a plurality of windows is positioned against said layer of photosensitive product (2); part of said photosensitive layer (2) is isolated and then developed in such a way as to generate holes therein (2), the bottom of the holes being formed by the upper side of the metallic strip (1); at least one layer of galvanic coating (5) is deposited inside the holes on contact with the metallic strip (1); a protective layer (6) is deposited on the upper side of the galvanic coating layer (5); a second mask (13) comprising a plurality of windows (18) is positioned against the layer of photosensitive product (2); part of the photosensitive layer (2) is isolated and then developed in such a way that the upper side is locally revealed; the metallic strip (1) is etched on the upper side in such a way as to eliminate part of the metallic strip (1) and to form conductor strips (1); and the layer of photosensitive product (2) and the protective layer (6) are completely dissolved in order to maintain only the conductor strips (1) comprising a plurality of bonding pads (5) formed by at least one galvanic coating layer (5).</p> |
申请公布号 |
WO2005125292(A1) |
申请公布日期 |
2005.12.29 |
申请号 |
WO2005FR50407 |
申请日期 |
2005.06.02 |
申请人 |
POSSEHL ELECTRONIC FRANCE S.A.;LAM, KAM MING |
发明人 |
LAM, KAM MING |
分类号 |
H01L21/48;H05K3/06;H05K3/20;H05K3/24;(IPC1-7):H05K3/24 |
主分类号 |
H01L21/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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