The invention relates to improved terahertz radiation sources and associated methods. A terahertz radiation source is described, comprising: an emitter (202) comprising a semiconductor material (12) ; a pair of electrodes (204a, b) on a face of said semiconductor, said pair of electrodes defining a gap between said electrodes; a pulsed light source input for illuminating said semiconductor so as to generate terahertz readiation (210) in said semiconductor by the photoconductive creation of very short (femtosecond) electromagnetic pulses; and a radiation collector (212) to collect said terahertz radiation; and wherein said radiation collector is disposed on the same side of said semiconductor as said electrodes. A related method of providing terahertz radiation is also described.
申请公布号
WO2004086560(A3)
申请公布日期
2005.12.29
申请号
WO2004GB01261
申请日期
2004.03.24
申请人
CAMBRIDGE UNIVERSITY TECHNICAL SERVICES LIMITED;THE UNIVERSITY OF LEEDS;SHEN, YAO-CHUN;LINFIELD, EDMUND, HAROLD;DAVIS, ALEXANDER, GILES