| 摘要 |
In a method of manufacturing a nonvolatile semiconductor memory device, a preliminary floating gate is formed on a substrate having an active region and an inactive region that extend in a first direction. A dielectric layer and a control gate layer are formed on the substrate. A control gate, a dielectric layer, and a remaining pattern structure are formed by etching the control gate layer and the dielectric layer in a second direction until the preliminary floating gate is partially exposed. The floating gate is formed by etching the preliminary floating gate and the remaining pattern structure until the silicon substrate is exposed. The remaining pattern structure may prevent the isolation layer defining the inactive region from being damaged, thereby suppressing a leakage current in the nonvolatile semiconductor memory device.
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