| 摘要 |
In a first ion implanting process (a1), an ion implanted layer (3) planned to be peeled is formed by implanting ions of less than a critical dose quantity from a side of an insulating film (2) of a bonding wafer (1). In an additional function layer depositing process (b2), an additional function layer (4) is deposited on the insulating film (2) on the bonding wafer (1). In a second ion implanting process (c1), the ion implanted layer (3) planned to be peeled is changed into an ion implanted layer (3') for peeling, by implanting ions of a dose quantity that makes the total dose quantity the critical dose quantity or more together with the dose quantity ion-implanted in the first ion implanting process, from a surface side of the additional function layer (4), so that the depth position is the same as that of the ion implantation in the first ion implanting process. Thus, by forming the ion implanted layer for peeling by the two-time ion implantation before and after the additional function layer depositing process, film thickness nonuniformity of the additional function layer is prevented from affecting film thickness uniformity of the bonded semiconductor thin film. |
