| 摘要 |
<p>A method, in a complementary metal oxide semiconductor fabrication process, of creating a layered housing containing a micro-electromechanical system device, the method comprising the steps of providing a cavity in at least one layer of the housing, the cavity being accessible through via holes in a layer of insulating material deposited thereon, and the layer of insulating material being covered by a thin film layer of conductive material. The method further comprises the step of hydrophobically treating at least a portion of the inner surface of the cavity. Finally the method comprises the steps of submerging the wafer in an electroplating solution and electroplating a conductive layer onto the thin film layer of conductive material such that the cavity remains free of electroplating solution.</p> |
