发明名称 p CHANNEL FILED EFFECT TRANSISTOR AND SENSOR USING THE SAME
摘要 <p>A p channel field effect transistor in which the sensitivity of an enzyme can be enhanced by immobilizing the enzyme directly on an FET channel surface (diamond surface), as well as a sensor including the same, is provided. A diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals is treated under the action of glutaraldehyde OHC(CH2)3CHO (30), so that the glutaraldehyde (30) is immobilized on the diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals. Subsequently, urease (29) is further applied thereto, so that the amino group (31) of the urease (29) is bonded to the glutaraldehyde (30). That is, the urease (29) can be immobilized on the diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals. When the urea concentration is increased from 10<-6> M to 10<-2> M, the threshold voltage shifts by about 0.1 V in the positive direction, and the sensitivity to urea concentration of 30 mV/decade is exhibited. <IMAGE></p>
申请公布号 EP1610121(A1) 申请公布日期 2005.12.28
申请号 EP20040723347 申请日期 2004.03.25
申请人 JAPAN SCIENCE AND TECHNOLOGY AGENCY 发明人 KAWARADA, HIROSHI
分类号 G01N27/414;H01L29/78;(IPC1-7):G01N27/414;H01L29/80 主分类号 G01N27/414
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