发明名称 |
Conducting wire and contact opening forming method for reducing photoresist thickness and via resistance |
摘要 |
Disclosed is a method for forming conducting wire and contact opening in a semiconductor device. The method of the present invention utilizes the formation of metal regions as a mask for etching a conductive layer of the semiconductor device to remove unnecessary portions so as to form conducting wires. The method of the present invention can reduce the necessary thickness of photoresist and well control the via resistance.
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申请公布号 |
US6979638(B2) |
申请公布日期 |
2005.12.27 |
申请号 |
US20040783014 |
申请日期 |
2004.02.23 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
HUANG TSE-YAO;CHEN YI-NAN;SHIH CHIANG-LIN |
分类号 |
H01L21/3213;H01L21/4763;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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