发明名称 |
Method for fabricating split gate transistor device having high-k dielectrics |
摘要 |
Methods and systems are disclosed that facilitate semiconductor fabrication by fabricating transistor devices having gate dielectrics with selectable thicknesses in different regions of semiconductor devices. The thicknesses correspond to operating voltages of the corresponding transistor devices. Furthermore, the present invention also provides systems and methods that can fabricate the gate dielectrics with high-k dielectric material, which allows a thicker gate dielectric than conventional silicon dioxide.
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申请公布号 |
US6979623(B2) |
申请公布日期 |
2005.12.27 |
申请号 |
US20030738957 |
申请日期 |
2003.12.17 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ROTONDARO ANTONIO L. P.;VISOKAY MARK ROBERT;CHAMBERS JAMES J.;COLOMBO LUIGI |
分类号 |
H01L21/28;H01L21/3205;H01L21/336;H01L21/4763;H01L29/51;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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