Process for controlling performance characteristics of a negative differential resistance (NDR) device,申请号US20020314785-传众专利搜索

发明名称	Process for controlling performance characteristics of a negative differential resistance (NDR) device
摘要	A variety of processes are disclosed for controlling NDR characteristics for an NDR element, such as peak-to-valley ratio (PVR), NDR onset voltage (V<SUB>NDR</SUB>) and related parameters. The processes are based on conventional semiconductor manufacturing operations so that an NDR device can be fabricated using silicon based substrates and along with other types of devices.
申请公布号	US6979580(B2)	申请公布日期	2005.12.27
申请号	US20020314785	申请日期	2002.12.09
申请人		发明人
分类号	H01L21/265;H01L21/28;H01L21/336;H01L21/8238;H01L21/8244;H01L21/8246;H01L21/84;H01L27/105;H01L27/11;H01L27/115;H01L27/12;H01L29/423;H01L29/51;(IPC1-7):H01L21/66	主分类号	H01L21/265
代理机构		代理人
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