发明名称 Support matrix with bonding channel for integrated semiconductors, and method for producing it
摘要 Support matrices for semiconductors are often encapsulated in a region of the bonding leads, the so-called bonding channel. The encapsulation is effected using a dispensable material that can flow onto the support matrix and causes contamination there. In order to prevent this flow, the support matrix for integrated semiconductors has a frame, conductor track structures and at least one bonding channel. In the bonding channel bonding leads or wires for connecting the conductor track structures to the integrated semiconductor are disposed. Disposed along the edge of the bonding channel a barrier for preventing the flow of flowable material from the bonding channel onto the frame and/or the conductor track structures. A method for producing such support matrices is likewise disclosed.
申请公布号 US6979887(B2) 申请公布日期 2005.12.27
申请号 US20010901550 申请日期 2001.07.09
申请人 INFINEON TECHNOLOGIES AG 发明人 KAHLISCH KNUT;MIETH HENNING
分类号 H01L23/28;H01L21/56;H01L21/60;H01L23/13;H01L23/29;H01L23/31;H01L23/498;(IPC1-7):H01L23/495 主分类号 H01L23/28
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