发明名称 |
NROM memory device with a high-permittivity gate dielectric formed by the low temperature oxidation of metals |
摘要 |
A high permittivity gate dielectric formed by low temperature metal oxidation is used in an NROM memory cell. The gate dielectric has a dielectric constant greater than silicon dioxide and is comprised of a nanolaminate structure. The NROM memory cell has a substrate with doped source/drain regions. The high-k gate dielectric is formed above the substrate. A polysilicon control gate is formed on top of the gate dielectric. The gate dielectric may have an oxide-high-k dielectric-oxide composite structure or an oxide-oxide-high-k dielectric composite structure.
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申请公布号 |
US2005280045(A1) |
申请公布日期 |
2005.12.22 |
申请号 |
US20050199827 |
申请日期 |
2005.08.09 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
FORBES LEONARD |
分类号 |
H01L21/28;H01L21/31;H01L21/336;H01L21/469;H01L21/8238;H01L27/148;H01L29/74;H01L29/76;H01L29/768;H01L29/792;H01L29/94;H01L31/062;H01L31/113;H01L31/119;(IPC1-7):H01L27/148 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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