| 摘要 |
PROBLEM TO BE SOLVED: To avoid the use of an expensive process by using an inexpensive material, and to inexpensively provide a large amount of semiconductor devices of high performance. SOLUTION: The semiconductor device is formed by a forming method comprising a process for forming a gate electrode 2 on at least a flexible insulating substrate 1; a process for forming a gate insulating film 4 on the gate electrode 2; a process for forming source/drain electrodes 5 on the gate insulating film; a process for polishing and removing a part of the source/drain electrodes 5 and the gate insulating film 4, and forming a channel between the source/drain electrodes; and a process for forming a semiconductor layer 6 between the channels. COPYRIGHT: (C)2006,JPO&NCIPI
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