| 摘要 |
PROBLEM TO BE SOLVED: To provide etching equipment which can perform taper work without generating etch stop. SOLUTION: This etching treatment equipment is provided with a treatment room 10, a testpiece base 8 arranged in the treatment room, a gas supply line 11 which supplies treatment gas into the treatment room, and a massflow controller 12 which controls quantity of gas flow which is to be supplied to the treatment room through the gas supply line. The treatment gas is mixed gas which consists of bromine gas or chlorine gas, and oxygen gas. The massflow controller controls so that proportion of oxygen gas occupied in the mixed gas becomes at most the proportion which is required for etching a polysilicon layer in the shape of a forward tapered shape until wafer bias voltage is impressed from the starting point of introduction of the treatment gas. COPYRIGHT: (C)2006,JPO&NCIPI
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