Non-volatile semiconductor memory

摘要

A non-volatile semiconductor memory having a memory transistor including a stacked-layer film formed between a semiconductor substrate and a gate electrode and having a charge storage ability, a first conductivity type region of the semiconductor substrate in which a channel is formed under the control of the gate electrode via the stacked-layer film, and two second conductivity type regions formed at the semiconductor substrate sandwiching the first conductivity type region therebetween, the memory transistor having a channel length estimated as the boundary of occurrence of a short channel effect differing between the time of a write operation and the time of a read operation and has a channel length of the actual device between the different channel lengths.