| 摘要 |
A field effect transistor of the present invention includes, on a semiconductor substrate, (i) a fin section formed in a fin shape protruding from the substrate, (ii) a gate dielectric for covering a channel region section of the fin section, (iii) a gate electrode that is insulated from the channel region section by the gate dielectric and is formed on the channel region section and (iv) an insulating layer for covering a surface of the semiconductor substrate. The fin section is formed so as to extend from the semiconductor substrate through the insulating layer and protrudes outward from a surface of the insulating layer. In this way, the channel region of the fin section is physically in contact with the substrate.
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